““Emerging technologies will drive the GaN power devices market”
The GaN power devices market is anticiapted to reach USD 2.60 billion by 2022, at a CAGR of 24.5% from 2015 to 2022. Factors such as emerging technologies such as High-Electron Mobility Transistor technology, leading to GaN HEMTs, quantum dots, e-GaN FET among others are driving the growth of the GaN power devices market. Moreover, the RF semiconductor devices industry is also a driving factor. RF electronics industry, has slightly different requirements with respect to characteristics of its electronic devices, components, and semiconductor devices as compared to other segments of the global electronics sector. One of the major reasons for this is that the RF sector is closely interrelated to the communications sector and requires electronic devices to operate at a wide spectrum of communication frequency ranges, ranging from normal frequencies to very high microwave frequencies, depending on the application.
“III-IV GaN semiconductor material has the maximum traction during the forecast period”
The CAGRs of IV-IV GaN semiconductor devices and III-IV GaN semiconductors, are growing at a faster rate, and also the CAGR of overall GaN semiconductor market, which is estimated to grow rapidly. The III-V GaN semiconductor devices segment is growing much faster than the IV-IV GaN semiconductors. This shows the rise in shipments of III-V GaN semiconductor devices with the rising number of advanced end user applications requiring superior and efficient performance. This is creating demand for increase in use of III-V compounds & composite materials (Indium alloys) in GaN semiconductors.
For complete report please visit http://www.gosreports.com/gan-power-devices-market-by-technology-semiconductor-materials-transistor-application-technologies-wafer-wafer-processes-wafer-size-and-design-configuration-device-power-discrete-power-ics/
TABLE OF CONTENTS
1 INTRODUCTION 17
1.1 OBJECTIVES OF STUDY...