半導體元件製程簡介

半導體元件製程簡介

  • Submitted By: qqshing
  • Date Submitted: 12/12/2010 12:48 AM
  • Category: Technology
  • Words: 2268
  • Page: 10
  • Views: 374

Topics

半導體元件製程簡介

• Basic semiconductor devices • Basics of IC processing

Basic Devices
• • • • • Resistor Capacitor Diode Bipolar Transistor MOS Transistor
ρ
l

Resistor
h w

R=ρ

l wh

ρ: Resistivity

1

Resistor
• Resistors are made by doped silicon or polysilicon on an IC chip • Resistance is determined by length, line width, height, and dopant concentration
h d
κ

Capacitors
l

C =κ

hl d

κ: Dielectric Constant

Capacitors
• Charge storage device • Memory Devices, esp. DRAM • Challenge: reduce capacitor size while keeping the capacitance • High-κ dielectric materials

Capacitors
Dielectric Layer Dielectric Layer Poly Si Oxide Si Poly 2 Poly Si Poly 1 Heavily Doped Si Si

Parallel plate

Stacked

Deep Trench

2

Diode
• P-N Junction • Allows electric current go through only when it is positively biased.

Figure 3.14
Transition region
−− −− −− −− −− ++ ++ ++ ++ ++

P

N

Vn Vp V0

I-V Curve of Diode

Bipolar Transistor
• • • • • PNP or NPN Switch Amplifier Analog circuit Fast, high power device

I V -I 0

3

NPN and PNP Transistors
E B C
C

NPN Bipolar Transistor
C
Emitter Base Collector n+ Al•Cu•Si SiO2 n-epi Electron flow n+ buried layer P-substrate p+

B E
N P N p+ n+ p

E
B E

B
P N P

C

MOS Transistor
• Metal-oxide-semiconductor • Also called MOSFET (MOS Field Effect Transistor) • Simple, symmetric structure • Switch, good for digital, logic circuit • Most commonly used devices in the semiconductor industry

NMOS Device
Basic Structure
VG

VD

VG
“Metal” Gate

Ground
n+ Source p-Si n+ Drain

VD

4

NMOS Device
Positive charges VG = 0 VD Electron flow VG > V T > 0 VD > 0

PMOS Device
Negative charges VG = 0 VD Hole flow VG < V T < 0 VD > 0

“Metal” Gate SiO 2 n+ Source n+ Drain SiO 2 n+ Source +++++++ −−−−−−− p-Si n+ Drain SiO 2 p+ Source p+ Drain SiO 2 p+ Source

“Metal” Gate −−−−−−− +++++++ n-Si p+ Drain

p-Si

n-Si

No...